TP65H050WS / TP65H035WS Tsarin Na Uku (Gen III) Gallium Nitride (GaN) Field-Effective Transistors (FETs)

Transphorm's GaN FETs yana nuna yanayin juyawa ta hanyar rage kutsewar lantarki (EMI) da kuma ƙara yawan amo

Transphorm's TP65H050WS da TP65H035WS sune Gen III 650 V GaN FETs. Suna ba da ƙananan EMI, ƙara ƙarancin ƙarar ƙofar, kuma mafi girman ɗakuna a aikace-aikacen kewaye. Ana samun 50 mΩ TP65H050WS da 35 mΩ TP65H035WS a cikin daidaitattun TO-247.

MOSFET da gyare-gyaren ƙira suna ba da damar na'urorin Gen III su iya haɓaka ƙarancin ƙarfin lantarki (rigakafi na amo) zuwa 4 V daga 2.1 V (Gen II) wanda ke kawar da buƙatar tasirin ƙofar mara kyau. Amincin ƙofar ya karu daga Gen II da 11% har zuwa ± 20 V. Wannan yana haifar da sauƙin shudewa kuma dandamali yana ba da haɓaka aikin haɓakawa a cikin manyan matakan yanzu tare da sauƙin kewaye.

Kamfanin 1600T na zamani na Kamfanin Kayan Wutar Lantarki shine 1600 W, matattarar totem-pole dandamali wanda ke amfani da waɗannan ƙarfin wutar lantarki mai ƙarfi GaN FETs don kawo daidaituwa na ƙarfin lantarki na 99% (PFC) a cikin cajin batir (e-scooters, masana'antu, da ƙari), ikon PC, sabobin , da kasuwannin caca. Fa'idodin yin amfani da waɗannan FETs tare da dandamali na tushen silicon 1600T sun haɗa da haɓaka haɓaka ta 2% da karuwar ƙarfin iko da 20%.

Dandalin 1600T yana amfani da TP65H035WS na Transphorm don cimma daidaituwa a cikin kewaya mai sauƙi-mai laushi da samar da zaɓuɓɓukan masu amfani lokacin da suke tsara kayayyakin tsarin. Nau'in TP65H035WS tare da direbobi ƙofar da aka saba amfani dasu don sauƙaƙe ƙira.